u ^s.nii-donailcto'i ^products., una. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon controlled rectifiers reverse blocking triode thyristors ... designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed. ? glass passivated junctions with center gate fire for greater parameter uniformity and stability ? small, rugged, thermowatt construction for low thermal resistance, high heat dissipation and durability ? blocking voltage to 800 volts telephone: (973) 376-2922 (212)227-6005 S2800 scrs 10 amperes rms 50 thru 800 volts ao- -o k (to-220ab) maximum ratings (tj = 25c unless otherwise noted.) rating peak repetitive forward and reverse blocking voltage(1 ) (tj = 25 to 100c, gate open) f a b S2800 d m n peak non-repetitive reverse voltage and non-repetitive off-state voltageo ) f a b S2800 d m n rms forward current (all conduction angles) tc = 75c peak forward surge current (1 cycle, sine wave, 60 hz, tc = 80c) circuit fusing considerations (t = 8.3 ms) forward peak gate power (t ? 10 us) forward average gate power operating junction temperature range storage temperature range symbol vrrm vdrm vrsm vdsm 't(rms) !tsm |2t pgm pg(av) tj tstg value 50 100 200 400 600 800 75 125 250 500 700 900 10 100 40 16 0.5 -40 to +100 ^toto+150 unit volts volts amps amps a2s watts watt c c ? vdrm ar|d vrrm for all types can be applied on a continuous basis. ratings apply for zero or negative gate voltage; however, positive gate \e shall not be applied concurrent with negative potential on the anode. blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. ? quality semi-conductors
S2800 series thermal characteristics characteristic thermal resistance, junction to case symbol rejc max 2 unit c/w electrical characteristics (tc = 25c unless otherwise noted.) characteristic peak forward or reverse blocking current (vak = rated vdrm or vrrm, gate open) tc = 25c tc = 100c instantaneous on-state voltage, (ijm = 30 a peak, pulse width = 1 ms, duty cycle dv/dt = 200 v/lls, di/dt = 10 a/us, tc = 75c) critical rate-of-rise of off-state voltage (vd = rated vdfsm. exponential rise, tc = 100c) symbol idrm. 'rrm vt igt vgt ih ?gt ?q dv/dt win ? ? ? ? ? ? ~ ? typ ? 1.7 8 0.9 10 1.6 25 100 max 10 2 2 15 1.5 20 ? ~ ? unit ua ma volts ma volts ma us us v/us t i seating ~'~l plane style 3: pin1. cathode 2. anode 3. gate 4. anode notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim a b c d f g h j k l n q r s t u v z inches win 0.570 0.380 0.160 0.025 0.142 0.095 0.110 0.014 0.500 0.045 0.190 0.100 0.080 0.045 0.235 0.000 0.045 max 0.620 0.405 0.190 0.035 0-147 0.105 0.155 0.022 0.562 0.055 0.210 0.120 0.110 0.055 0.255 0.050 ? 0.080 millimeters min 14.48 9.66 4.07 0.64 3.61 2.42 2,80 0.36 12.70 1.15 4.83 2.54 2.04 1,15 5.97 0.00 1.15 ? max 15,75 10.28 4.82 0.88 3.73 2.66 3.93 0.55 14.27 1.39 5.33 3.04 2.79 1.39 6.47 1.27 2.04
|
